3N80 Amps, Volts N-channel Power Mosfet. DESCRIPTION. The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate . 3NTF3-T Amps, Volts N-channel Power Mosfet. DESCRIPTION. The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low . 3N80 Datasheet PDF Download – N-Channel MOSFET Transistor, 3N80 data sheet.

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This continues until time 3n880. The base resistance RB must be minimized through careful design of the doping and distance under the source region. Over time, new materials, structures and processing techniques are expected to raise these limits. Similarly, turn-off delay, td offis the time taken to discharge the capacitance after the after is switched off.

If the applied drain voltage is greater than the openbase breakdown voltage, then irt MOSFET will enter avalanche and may be destroyed if the current is not limited externally. These simple calculations would not have been possible with input capacitance values. The parasitic BJT can make the device susceptible to unwanted device turn-on and premature breakdown.

3N80 поиск аналога электронного компонента (cross reference):

Current-Voltage undergoing destructive failure due to second breakdown. Finally, CDS, the capacitance associated with the body-drift diode, varies inversely with the square root of the drain-source bias. Contact us to buy or sell excess electronic component parts and inventory.


Channel length also affects transconductance. RG is the total gate resistance in the irg and the voltage drop across it is given by: Figure 11 a 3j80 the transfer characteristics and Figure 11 b is an equivalent circuit model often used for the analysis of MOSFET switching performance. Electrical Socket Relay Sockets Semiconductor: In addition, we provide excess inventory consignment, electronic engineering and product design services, prototyping, contract manufacturing, handheld portable computing products, and software application development services.

The leakage current flowing between source and drain is denoted by IDSS. Good circuit design practice dictates the use of a higher gate voltage than the bare minimum required for switching and therefore the gate charge used in the calculations is QG corresponding to t4. Terms of Sale Terms of Use. Their forward voltage drop decreases with increasing temperature causing diversion of current to a single device urf several MOS devices are paralleled. This parameter is normally quoted for a Vgs that gives a drain current equal to irr one half of the maximum current rating value and for a VDS that ensures operation in the constant current region.

CGD is also called the Miller capacitance because it causes the total dynamic input capacitance to become greater than ir sum of the static capacitances. Cell density has increased over the years from irrf half a million per square inch in to around eight million for planar MOSFETs and around 12 million for the trench technology.

The switching performance of a device is determined by the time required to establish voltage changes across capacitances.


3N80 MOSFET Datasheet pdf – Equivalent. Cross Reference Search

This 2 component is higher in high voltage 1 devices due to the higher resistivity or lower background carrier concentration in 0 0 5 10 15 the epi. Maximum values of 1. For example, a device with a gate charge of 20nC can be turned on in 20? The parasitic JFET appearing between the two body implants restricts current flow when the depletion widths of the two adjacent body diodes extend into the drift region with increasing drain voltage. Vth is usually measured at a drain-source current of ?

The substrate contribution becomes more significant for lower breakdown voltage devices. We will gladly help you locate any Electronic or Electrical Parts.

3N80 Datasheet PDF – Inchange Semiconductor

RG is the distributed resistance of the gate and is approximately inversely proportional to active area. Itf are a franchised distributor of electronic components, as well as a sourcing and procurement agent for hard-to-find, obsolete, and allocated parts. LS and LD are source and drain lead inductances and are around a few tens of nH.

The lower limit of this length is set by the ability to control the double-diffusion process and is around mm today. The planar design has already been introduced in the schematic of Figure 3. Common values are Figure 7.